Memrystor na bazie HfO2-HfOx z warstwami aktywnymi o różnych rozmiarach

Amiran Bibilashvili; Zurab Kushitashvili; Larisa Jangidze

doi:10.29227/IM-2024-01-35

HfO2-HfOx Based Memristor with Different Size Active Layers

Amiran Bibilashvili LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia https://orcid.org/0000-0002-8153-4498
Zurab Kushitashvili LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia https://orcid.org/0000-0001-7140-3438
Larisa Jangidze LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia https://orcid.org/0000-0002-5972-3794

DOI: https://doi.org/10.29227/IM-2024-01-35

Keywords: electrical devices, memristor, active layer, photolithography

Abstract

Memristore parameters are strongly depend on the size of active layers. In this paper is reported the outcomes of memristore created with different size active layers. There are considered 1μ, 5μ and 10μ diameter separated devices in the form of crossbar with HfO2 + HfOx active layer and tungsten top contact, titanium nitride botton contact and aluminum wiring contact. As substrate was used sapphire and active layers of memristore was deposited by reactive magnetron sputtering technology. With photolithography exposure system by new pothomask has been done 1μ, 5μ and 10μ diameter lithography for formation active layers and all contacts. Leakage currents dropped to 0.01mA, increased cicles of histeresis of I-V curves and dramatically increased Roff /Ron ratio to be 100000.

Published

2024-06-23

How to Cite

Bibilashvili, A., Kushitashvili, Z., & Jangidze, L. (2024). HfO2-HfOx Based Memristor with Different Size Active Layers. Test, 1(1), 317–321. https://doi.org/10.29227/IM-2024-01-35

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Issue

Vol 1 No 1 (2024): Inzynieria Mineralna

Section

ARTICLES

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