Technologia reaktywnego rozpylania magnetronowego do otrzymywania azotków III

Zurab Kushitashvili; Amiran Bibilashvili; Nugzar Dolidze; Givi Skhiladze; Revaz Guliaevi

doi:10.29227/IM-2024-01-78

Zurab Kushitashvili LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia https://orcid.org/0000-0001-7140-3438
Amiran Bibilashvili Faculty of Geology, Geophysics and Environmental Protection, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland
Nugzar Dolidze LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia
Givi Skhiladze LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia
Revaz Guliaevi LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

DOI: https://doi.org/10.29227/IM-2024-01-78

Słowa kluczowe: Reaktywne rozpylanie magnetronowe, Skaningowa mikroskopia elektronowa, Dyfrakcja promieniowania rentgenowskiego, Azotki

Abstrakt

In the present work is studied synthesis of galium nitride (GaN) and aluminum nitride (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium and Aluminum materials and as a reagent gas was used high purity (99.9999%) Nitrogen. Magnetron sputtering system with strong magnets (1450 mT) allows to make plasma at a low preasure 3 × 10-2 Pa and deposition process was carried out at high vacuum conditions. Deposited layers of GaN and AlN on the sappire substrate was analysed by X-ray diffraction (XRD) and revealed the crystalline nature highly oriented with the (0002) for both nitrides. For chemical composition was measured X-ray Photoelectron Spectroscopy (XPS) and it was found out the ratios of Ga:N and Al:N to be 1.07 and 1.04 respectively. For surface analysis was made Scanning Electron Microscopy (SEM). Optic transmission spectra showed band gaps to be 3.43 eV and 6.13 eV for GaN and AlN respectively.